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| v01.0701 MICROWAVE CORPORATION HMC324MS8G Features P1dB Output Power: +16 dBm Output IP3: +30 dBm Gain: 13 dB Single Supply: 8.75V Ultra Small Package: MSOP8G GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz 1 AMPLIFIERS - SMT Typical Applications This Amplifier is ideal for RF Systems where high linearity is required such as: * CATV Head-End and Modem * Cellular & Base Stations * MMDS * WirelessLAN Functional Diagram General Description The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that contains two non-connected amplifiers in parallel inside an 8 lead MSOPG package. When used in conjunction with an external balun, the outputs of the amplifier can be combined to reduce the 2nd harmonic distortion that is generated by the amplifier. With Vcc at +7.5V, the HMC324MS8G offers 13 dB of gain and with power combining and harmonic cancellation, +24 dBm of output power can be achieved. Using a Darlington feedback pair results in reduced sensitivity to normal process variations and provides a good 50-ohm input/output port match. This amplifier is ideal for RF systems where high linearity is required and can operate in 50-ohm and 75-ohm systems. Electrical Specifications, TA = +25 C Vs= +8.75V, Rbias= 22 Ohm Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) @ 1 GHz Saturated Output Power (Psat) @ 1 GHz Output Third Order Intercept (IP3) @ 1 GHz Noise Figure Supply Current (Icc) 10 6 16 13 18 27 10 Typ. DC - 3.0 13 0.015 15 9 20 16 21 30 6 57 16 0.025 Max. GHz dB dB/ C dB dB dB dBm dBm dBm dB mA Units Note: All specifications refer to a single amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 1 - 158 v01.0701 MICROWAVE CORPORATION HMC324MS8G GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature 20 15 10 20 18 16 S21 S11 S22 17 - 25 GHz 1 AMPLIFIERS - SMT 1 - 159 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 0 1 14 GAIN (dB) 12 10 8 6 4 2 0 +25 C +60 C -40 C 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25 C +60 C -40 C Output Return Loss vs. Temperature 0 -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) -5 -10 -10 -15 -15 -20 +25 C +60 C -40 C -25 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) -20 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) +25 C +60 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com REVERSE ISOLATION (dB) v01.0701 MICROWAVE CORPORATION HMC324MS8G GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature 24 22 20 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) +25 C +60 C -40 C 17 - 25 GHz 1 AMPLIFIERS - SMT 24 22 20 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) +25 C +60 C -40 C P1dB (dBm) Power Compression @ 1 GHz 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Power Compression @ 2 GHz 18 Psat (dBm) Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 16 14 12 10 8 6 4 2 0 -2 -4 -6 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pout Gain PAE Pout Gain PAE 0 2 4 6 8 10 12 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 34 32 30 28 +25 C +60 C -40 C IP3 (dBm) 26 24 22 20 18 16 14 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 1 - 160 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.0701 MICROWAVE CORPORATION HMC324MS8G GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz Absolute Maximum Ratings DC Voltage on Pin 1 Input Power (RFin)(Vcc= +5V) Channel Temperature (Tc) Continuous Pdiss (T= 85 C) (derate 4.41 mW/C above 85 C) Storage Temperature Operating Temperature 8 Volts +20 dBm 150 C 507 mW -65 to +150 C -40 to +85 C 1 AMPLIFIERS - SMT 4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH USING WHITE INK, LOCATED APPROX AS SHOWN 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. Outline Drawing 1. MATERIAL: A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC, SILICA & SILICONE INPREGNATED. B. LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING: LEAD-TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETERS) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 1 - 161 v01.0701 MICROWAVE CORPORATION HMC324MS8G GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz Application Circuit 1 AMPLIFIERS - SMT Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1 and 4. 2. External blocking capacitors are required on Pins 1, 4, 5, and 8. 1 - 162 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.0701 MICROWAVE CORPORATION HMC324MS8G GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz Evaluation PCB for HMC324MS8G 1 AMPLIFIERS - SMT The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Item J1 - J4 U1 PCB* Description PC Mount SMA Connector HMC324MS8G 104221 Evaluation PCB 1.5" x 1.5" * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 1 - 163 |
Price & Availability of HMC324MS8G01
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